You are using a web browser version that is no longer supported. Please make sure you are using the most updated version of your browser, or try using our supported browser Google Chrome to get the full Applied Materials experience.
To meet these needs, we developed the new Producer® Selectra™ Etch system whose breakthrough dry process delivers extreme materials selectivity and atomic-level etch precision to the smallest spaces for a wide variety of dielectric, metal, and semiconductor films. It is unique in its selectivity between oxide materials of differing densities, a pivotal development in extending the scalability of planar NAND memory and next generation DRAM devices.
The system’s gentle, radical-based, isotropic process avoids the risk of damage to sensitive exposed materials. These attributes are essential for today’s multi-patterning schemes (Fig. 1), FinFET, 3D NAND, and advanced DRAM (see animations). They will also be instrumental in expanding the range of options for advancing Moore’s Law through new architectures, materials, and integration schemes in future generations.
View animations highlighting this technology and learn more about this system on our website.