Jonathan Bakke

The Applied Materials platforms that create our Integrated Materials Solution for cobalt have been industry workhorses for several decades, and the innovations being developed show they remain critical for the dimensional and materials scaling necessary to continue improving the power, performance and area/cost (PPAC) of chips.

The first material change in the transistor contact and interconnect in 20 years is required to remove a major performance bottleneck between transistors and the outside world.

Applied has introduced a new method of tungsten gap fill for logic contacts and local interconnects that will help improve the yield of next-generation devices. Learn why it’s so significant.

New materials engineering innovations significantly reduce contact resistance, making it possible to extend tungsten metallization to next-generation devices.

This post examines why contact resistance is becoming a major factor limiting transistor performance as logic devices continue to scale downward.