RC

Evolutionary changes in materials and device structures critical for next generation of device scaling.

Applied has introduced a new method of tungsten gap fill for logic contacts and local interconnects that will help improve the yield of next-generation devices. Learn why it’s so significant.

New materials engineering innovations significantly reduce contact resistance, making it possible to extend tungsten metallization to next-generation devices.

New solutions to building DRAMs based on innovations in materials engineering that overcome scaling challenges. 

This post examines why contact resistance is becoming a major factor limiting transistor performance as logic devices continue to scale downward.

In this blog post, I discuss why RC delay is a major issue in the continued downward scaling of logic and memory devices.