EUV

Classic Moore’s Law Scaling Challenges Demand New Ways to Wire and Integrate Chips

As classic 2D scaling with EUV shrinks on-chip wiring, electrical resistance increases exponentially, creating power, performance and heat challenges. Moreover, as transistor counts continue to increase exponentially while 2D scaling slows, die sizes are increasing to the point where designers are hitting the “reticle limit” of chip designs. Fortunately, innovations in chip wiring will enable chipmakers to continue delivering improvements in performance and power—while advances in chip integration will give designers virtually unlimited transistor budgets. In short, “new ways to wire and integrate chips” will enable amazing computing experiences for everyone.
sparse sampling on a wafer

Innovations in eBeam Metrology Enable a New Playbook for Patterning Control

The patterning challenges of today’s most advanced logic and memory chips can be solved with a new playbook that takes the industry from optical target-based approximation to actual, on-device measurements; limited statistical sampling to massive, across-wafer sampling; and single-layer patterning control to integrative multi-layer control. Applied’s new PROVision® 3E system is designed to enable this new playbook.

Breakthrough in Metrology Needed for Patterning Advanced Logic and Memory Chips

As the semiconductor industry increasingly moves from simple 2D chip designs to complex 3D designs based on multipatterning and EUV, patterning control has reached an inflection point. The optical overlay tools and techniques the semiconductor industry traditionally used to reduce errors are simply not precise enough for today’s leading-edge logic and memory chips.