Introducing Breakthroughs in Materials Engineering for DRAM Scaling

To help the industry meet global demand for more affordable, high-performance memory, Applied Materials today introduced solutions that support three levers of DRAM scaling: a new hard mask material for capacitor scaling, a low-k dielectric material for the interconnect wiring, and the adoption of high-k metal gate transistors for advanced DRAM designs.

DRAM Scaling Requires New Materials Engineering Solutions

The AI Era of computing is fueling exponential growth in data generation, and the entire technology ecosystem depends on the semiconductor industry finding new ways to scale DRAM architectures to keep pace with bit demand. New hard mask patterning films can enable thinner capacitors with the highest possible aspect ratios, while new dielectric insulating materials can reduce the spacing between metal lines, both resulting in new ways to shrink.