Semiconductors

Electron beam (ebeam) technology plays a major role in semiconductor fabrication as explained in the video and summarized in an infographic.

As scaling continues, device complexity and shrinking dimensions are demanding unprecedented selectivity and etch precision as well as a much gentler process to avoid damaging fragile features.

Applied has introduced a new method of tungsten gap fill for logic contacts and local interconnects that will help improve the yield of next-generation devices. Learn why it’s so significant.

New materials engineering innovations significantly reduce contact resistance, making it possible to extend tungsten metallization to next-generation devices.

New solutions to building DRAMs based on innovations in materials engineering that overcome scaling challenges. 

This post examines why contact resistance is becoming a major factor limiting transistor performance as logic devices continue to scale downward.

In this blog post, I discuss why RC delay is a major issue in the continued downward scaling of logic and memory devices. 

A review of the integration and high-volume manufacturing challenges of new memories to be discussed at IITC this week.

Applied Materials is chairing a panel discussion with memory technology leaders including Intel, Samsung, SK hynix and Western Digital to address new types of storage class memory as part of the eighth IEEE International Memory Workshop on May 16.