The past several weeks have been big for 3D NAND flash technology.
Samsung announced it had begun mass production of its first 3D vertical NAND flash memory, a 128GB chip using 24 cell layers. Following this news, at the Flash Memory Summit, Samsung Executive Vice President and General Manager E.S. Jung delivered a special keynote address, titled ”Ushering in the 3D Memory Era with Vertical NAND.” In his talk, he told the audience that Samsung’s implementation of 3D NAND was delivering impressive performance benefits over its previous 19nm planar NAND: 2 times higher density, 2 times faster write speed, 50 percent less power consumption and 10 times better endurance. Read more