Advanced Memory

Applied Materials

3D NAND Is a Reality – What’s Next?

One of the biggest developments taking place in the semiconductor industry is the emergence of 3D NAND memory technology. Products are available today that feature 3D NAND devices. It has taken years to become a reality — since Toshiba first discussed the concept of 3D NAND at the VLSI Symposium in 2007 – and now it is poised to replace planar NAND flash memory for storage. The path that has led to this point is similar to what happened with the logic roadmap; despite innovative workarounds, the era of traditional planar "shrinks" for NAND is running out of steam.  And, just as with logic, it has required significant technical advances to overcome the formidable challenges to successfully manufacture complex vertical 3D NAND designs.
3D NAND - On its Way

3D NAND - On its Way

The past several weeks have been big for 3D NAND flash technology.Samsung announced it had begun mass production of its first 3D vertical NAND flash memory, a 128GB chip using 24 cell layers. Following this news, at the Flash Memory Summit, Samsung Executive Vice President and General Manager E.S. Jung delivered  a special keynote address,  titled ”Ushering in the 3D Memory Era with Vertical NAND.”  In his talk, he told the audience that Samsung’s implementation of 3D NAND was delivering impressive performance benefits over its previous 19nm planar NAND:  2 times higher density, 2 times faster write speed, 50 percent less power consumption and 10 times better endurance.